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5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Ranks Dual rank CAS Latency CL7 Configuration 512M x8 Pieces in Kit 2 Compatibility
35V with a CAS Latency of CL11
2V Technology DDR4 Error Correction ECC Signal Processing Registered Form Factor 288-pin RDIMM Ranks Dual rank Configuration x4 Pieces in Kit 1
M386A8K40CM2-CVF Capacity 64GB (1x 64GB) Brand Samsung Speed DDR4-2933 - 2933MT/s - PC4-23400 Voltage 1
Samsung 2GB (1x 2GB) CL7 DDR3-1066 PC3-8500 1.5V 240-pin UDIMM RAM Module Capacity_4GB 5V Technology DDR3L Error CorrectionProduct Overview This 2GB (1x 2GB) DDR3 1066 MT s RAM module from Samsung is for use in DDR3 compatible systems and operates at 1066 MT s with an overall transfer rate of PC3 8500. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL7, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.
US$ 63.00
US$ 31.50
US$ 94.50
